for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package typical cw broadband performance summary 1 @ 25 ? c 1 bias condition: vdd=+50v, idq= 120 ma (vgs= -2.0 ~ -4.5v typical), pin = 29 dbm rf performance measured on the recommended broadband evaluation circuit board. general description the 0510gn- 25 - cp is a common source, class- ab , gan on sic hemt transis to r amplifier for 50mhz-1ghz broadband pulsed and cw rf power applications. the transistor is housed in a ceramic smt package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness. features: ? wide- band 50mhz-1ghz general purpose driver applications ? single lumped-element broadband application circuit ? ideal for pulsed radar, avionics, ism , and cw communication ? commercial & military applications ? 25 w pulsed/cw psat, 16 db power gain and 50 % drain efficiency ? low-cost ceramic smt package with excellent rf & thermal performance, reliability & ruggedness ? 50v bias operation with high breakdown voltage package outline ceramic smt 160x200 mil absolute maximum ratings maximum cw power dissipation device dissipation @ 25 ? c 25 w maximum voltage and current drain-source voltage (v dss ) 1 25 v gate-source voltage (v gs ) -8 to +0 v supply current ( i dd ) 1400 ma maximum temperatures storage temperature (t stg ) -55 to +150 ? c op erating junction temperature +200 ? c parameter units 50 mhz 300 mhz 500 mhz 700 mhz 900 mhz 1 ghz output power psat w 33 36 31 27 29 27 power gain db 16 16.5 16 15.5 1 5.7 1 5.5 ? d drain efficiency % 85 75 61 50 52 52 downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package dc functional characteristics @ 25 ? c symbol characteristics test conditions min typ max units i d(off) drain leakage current v gs = -8v, v dd = 50 v 2 ma i g(off) gate leakage current v g s = -8v, v dd = 0v 0.4 ma bv dss drain-source breakdown voltage v gs =-8v, i dd = 4 ma 12 5 v v gs(th) gate threshold voltage v ds =50v, i dd = 4 ma - 4.8 - 3.4 - 2.5 v electrical characteristics 1 @ 25 ? c symbol characteristics test conditions 1 min typ max units pout output power pin=0.8 w freq= 50 mhz - 10 00 mhz, cw 28 w gp power gain pin=0.8w freq= 5 00 mhz, cw 16 db ? d drain efficiency pin=0.8w freq= 5 00 mhz, cw 61 % pout output power pin=0.8w freq= 1000 mhz, pulsed 2 31 w gp power gain pin=0.8w freq= 1000 mhz, pulsed 2 16 db ? d drain efficiency pin=0.8w freq= 1000 mhz, pulsed 2 54 % dr droop pin=0.8w freq= 10 00 mhz , pulsed 2 0. 1 db vswr-t load mismatch tolerance pin=0.8w freq= 10 00 mhz 5 :1 ?jc thermal resistance including pcb, tbase = 85 c pulse width=1 ms duty=10% cw 1.7 4.2 c/w 1 bias condition: vdd=+50v, idq= 120 ma (vgs= - 2. 0 ~ -4.5v typical), cw 2 bias condition: vdd=+50v, idq= 80 ma (vgs= -2.0 ~ -4.5v typical), pw = 1ms, dc = 10% rf performance measured on the recommended broadband evaluation board. downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package cw performance plots @ vdd=50 v, idq = 120ma, t = 25 ? c downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package description 50 mhz - 1 ghz c2 0603, 12 pf, 5%, 250v, atc 600s c3 0603, 3.3 pf, 5%, 250v, atc 600s c6 0603, 1 pf, 5%, 250v, atc 600s c9 0603, 1.8 pf, 0.25pf, 250v, atc 600s c13 0603, 470 pf, 5%, 100v, avx, x7r c1, c11, c7 0603, 1000 pf 10%, 100v, avx, x7r c5,c14 0603, 10000 pf, 10%, 100v, avx, x7r c8,c15 1206, 4.7 uf, 10%, 100v, avx, x7s r1 0603 6.2 r5,r6,r7 0603 0.0 jumper r2 0603 3 r3 0603 24 r4 ndp-0505wa 1k ohm, 5%, ims l1 0402hp, 2.7 nh , 5% coilcraft l2 0402pa, 5.8 nh , 5% coilcraft l3 4310lc-132keb, 1.3uh, coilcraft l4 0603hp, 6.0 nh , 5% coilcraft j3 tsm-105-01-s-sv-a, samtec q1 0510GN-25-CP note: item board material: rogers ro4003c, 12 mil thickness, er = 3.38, 1 oz cu evaluation board layout 0510 cp eb1 assembly diagram and bom for broadband 50 mhz to 1 ghz board material: rogers ro4003c, 12 mil thickness, er = 3.38, 1 oz cu 8 mil dia vias below package, qt y: 85 , solid plated cu filled. board size: 1.5 x 1.3 inches downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package ceramic smt package 160x200 mil outline & dimensions all dimensions are in inches notes: 1. backside exposed pad must be connected to solid plated cu filled vias for optimum rf & thermal performance. see recommended evaluation board layout pin function 1 gate (rf/dc input ) 2 drain (rf output/dc input) backside exposed pad source (rf/ dc gnd & thermal pad) downloaded from: http:///
for the most cu rrent data, consult microsemis website: www.microsemi.com specifications are subject to change, consult the rfis factory at (408) 986-8031 for the latest information 0510gn-25- cp 25 watts ? 50 volts ? pulsed & cw 50mhz-1ghz broadband gan amplifier ceramic smt package the information contained in the document is proprietary and confi dential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or d isclosed or used without the express duly signed written consent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply . this document and the informa tion contained herein may not be modified, by any person oth er than authorized personnel of microsemi. no license under an y patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducemen t, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by a n officer of microsemi. microsemi reserves the right to change the configuration, f unctionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission -critical equipment or applications. microsemi assumes no liability wh atsoever, and microsemi disclaims any express or implied wa rranty, relating to sale and/or use of microsemi products including liabil ity or warranties relating to fitness for a particular purpos e, merchantability, or infringement of any patent, copyright o r other intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www .microsemi.com/legal/tnc.asp. revision history revision date affected section(s) description 1.0 5- 13 - 15 - initial preliminary release 2.0 6- 21 - 15 page 1 package photo updated downloaded from: http:///
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